參數(shù)資料
型號： ST7FLIT19B
廠商： 意法半導(dǎo)體
英文描述： 8-Bit MCU With Single Voltage Flash Memory, Data EEPROM, ADC, 5 Timers, SPI(內(nèi)部RC,PLL,ADC,ROP,ICP, IAP,SPI的8位MCU)
中文描述： 8位微控制器單電壓閃存存儲器，數(shù)據(jù)EEPROM，模數(shù)轉(zhuǎn)換器，5計時器和SPI（內(nèi)部鋼筋，鎖相環(huán)，藝發(fā)局，人事，電感，國際檢察官聯(lián)合會的SPI的8位微控制器）
文件頁數(shù)： 109/155頁
文件大?。?/td> 2968K
代理商： ST7FLIT19B
ST7LITE1xB
109/155
13.2 ABSOLUTE MAXIMUM RATINGS
Stresses above those listed as “absolute maxi-
mum ratings” may cause permanent damage to
the device. This is a stress rating only and func-
tional operation of the device under these condi-
13.2.1 Voltage Characteristics
tions is not implied. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
13.2.2 Current Characteristics
13.2.3 Thermal Characteristics
Notes:
1. Directly connecting the RESET and I/O pins to V
or V
could damage the device if an unintentional internal reset
is generated or an unexpected change of the I/O configuration occurs (for example, due to a corrupted program counter).
To guarantee safe operation, this connection has to be done through a pull-up or pull-down resistor (typical: 4.7k
for
RESET, 10k
for I/Os). Unused I/O pins must be tied in the same way to V
DD
or V
SS
according to their reset configuration.
2. I
must never be exceeded. This is implicitly insured if V
IN
maximum is respected. If V
maximum cannot be
respected, the injection current must be limited externally to the I
value. A positive injection is induced by V
>V
while a negative injection is induced by V
<V
. For true open-drain pads, there is no positive injection current, and the
corresponding V
IN
maximum must always be respected
3. All power (V
DD
) and ground (V
SS
) lines must always be connected to the external supply.
4. Negative injection disturbs the analog performance of the device. In particular, it induces leakage currents throughout
the device including the analog inputs. To avoid undesirable effects on the analog functions, care must be taken:
- Analog input pins must have a negative injection less than 0.8 mA (assuming that the impedance of the analog voltage
is lower than the specified limits)
- Pure digital pins must have a negative injection less than 1.6mA. In addition, it is recommended to inject the current as
far as possible from the analog input pins.
5. No negative current injection allowed on PB0 pin.
6. When several inputs are submitted to a current injection, the maximum
Σ
I
is the absolute sum of the positive
and negative injected currents (instantaneous values). These results are based on characterisation with
Σ
I
INJ(PIN)
maxi-
mum current injection on four I/O port pins of the device.
Symbol
Ratings
Maximum value
Unit
V
DD
- V
SS
V
IN
V
ESD(HBM)
V
ESD(MM)
Supply voltage
Input voltage on any pin
1) & 2)
Electrostatic discharge voltage (Human Body Model)
Electrostatic discharge voltage (Machine Model)
7.0
V
V
SS
-0.3 to V
DD
+0.3
see
section 13.7.3 on page 125
Symbol
Ratings
Maximum value
Unit
I
VDD
I
VSS
Total current into V
DD
power lines (source)
3)
Total current out of V
SS
ground lines (sink)
3)
Output current sunk by any standard I/O and control pin
Output current sunk by any high sink I/O pin
Output current source by any I/Os and control pin
Injected current on ISPSEL pin
Injected current on RESET pin
Injected current on OSC1 and OSC2 pins
Injected current on PB0 pin
5)
Injected current on any other pin
6)
Total injected current (sum of all I/O and control pins)
6)
75
150
20
40
- 25
± 5
± 5
± 5
+5
± 5
± 20
mA
I
IO
I
INJ(PIN) 2) & 4)
Σ
I
INJ(PIN) 2)
Symbol
Ratings
Value
Unit
T
STG
Storage temperature range
Maximum junction temperature (see
Table 24, “THERMAL CHARACTERISTICS,” on
page 144
)
-65 to +150
°C
T
J
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