參數(shù)資料
型號(hào)： K4F641612D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
中文描述： 4米× 16位的CMOS動(dòng)態(tài)RAM的快速頁(yè)面模式
文件頁(yè)數(shù)： 4/35頁(yè)
文件大?。?/td> 400K
代理商： K4F641612D
CMOS DRAM
K4F661612D,
K4F641612D
Industrial Temperature
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V,
W, OE=V
IH
, Address=Don
′
t care, DQ=Open, T
RC
=31.25us
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4F661612D
K4F641612D
I
CC1
Don
′
t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
I
CC2
Normal
L
Don
′
t care
1
1
1
1
mA
mA
I
CC3
Don
′
t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
I
CC4
Don
′
t care
-45
-50
-60
70
60
50
70
60
50
mA
mA
mA
I
CC5
Normal
L
Don
′
t care
0.5
200
0.5
200
mA
uA
I
CC6
Don
′
t care
-45
-50
-60
130
120
110
130
120
110
mA
mA
mA
I
CC7
L
Don
′
t care
350
350
uA
I
CCS
L
Don
′
t care
350
350
uA
相關(guān)PDF資料
PDF描述
K4F641612D-TI 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F641612D-TP 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F661612D 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F661612D-TI 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F661612D-TP 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4F641612D-TI 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F641612D-TP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F641612E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F660412D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode
K4F660811B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode
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