- 您現(xiàn)在的位置：買賣IC網 > PDF目錄374258 > K4H563238M-TCA0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Mb DDR SDRAM PDF資料下載
參數資料
| 型號： | K4H563238M-TCA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數： | 3/53頁 |
| 文件大小： | 669K |
| 代理商： | K4H563238M-TCA0 |
第1頁第2頁當前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
- 3 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History(continued)
Version 0.7 (March, 2000)
- Changed 128Mb spec from target to Preliminary version.
- Changed partnames as follows.
- Changed input cap. spec.
- Changed operating condition.
- Added Overshoot/Undershoot spec
. Vih(max) = 4.2V, the overshoot voltage duration is
≤
3ns at VDD.
. Vil(min) =- 1.5V, the overshoot voltage duration is
≤
3ns at VSS.
- Changed AC parameters as follows.
- Added DC spec values.
Version 0.71 (April, 2000)
- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.
- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.
Version 0.72(May,2000)
-
Changed DC spec item & test condition
Version 0.73(June,2000)
-
Added updated DC spec values
-
Deleted tDAL in AC parameter
Version 1.0(November,2000)
-
Eliminate "preliminary"
from
to
KM44L32031BT-G(L)Z/Y/0
K4H280438B-TC(L)A2/B0/A0
KM48L16031BT-G(L)Z/Y/0
K4H280838B-TC(L)A2/B0/A0
KM416L8031BT-G(L)Z/Y/0
K4H281638B-TC(L)A2/B0/A0
from
to
CK/CK
2.5pF ~ 3.5pF
2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF
DQ/DQS/DM
4.0pF ~ 5.5pF
4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF
CMD/Addr
2.5pF ~ 3.5pF
2.0pF ~ 3.0pF with Delta Cin = 0.5pF
from
to
Vil/Vih(ac)
Vref +/- 0.35V
Vref +/- 0.31V
V
IL
/V
IH
(dc)
Vref +/- 0.18V
Vref +/- 0.15V
from
to
Comments
tDQSQ
+/- 0.5(PC266), +/- 0.6(PC200)
+0.5(PC266), +0.6(PC200)
tDV
+/- 0.35tCK
-
Removed
tQH
-
tHPmin - 0.75ns(PC266)
New Definition
tHPmin - 1.0ns(PC200)
tHP
-
tCLmin or tCHmin
New Definition
相關PDF資料 |
PDF描述 |
|---|---|
| K4H640438A-TCB0 | 128Mb DDR SDRAM |
| K4H640438A-TLA0 | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.2"; External Width:3.1"; External Depth:3.7"; Enclosure Color:Gray |
| K4H640438A-TLA2 | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:4.7"; External Width:3.1"; External Depth:2.2"; Enclosure Color:Gray |
| K4H640438A-TLB0 | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:4.7"; External Width:3.1"; External Depth:3.3"; Enclosure Color:Gray |
| K4H640438B-TCA0 | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:6.2"; External Width:3.1"; External Depth:2.1"; Enclosure Color:Gray; Cover Color:Gray RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4H563238M-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H563238M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H563238M-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H563238M-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H563238M-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。