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參數(shù)資料
| 型號： | K4H280838M-TCA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 16/53頁 |
| 文件大?。?/td> | 669K |
| 代理商： | K4H280838M-TCA0 |
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- 16 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Mode Register Set
*1 : MRS can be issued only at all bank precharge state.
*2 : Minimum
t
RP
is required to issue MRS command.
Command
2
0
1
5
3
4
8
6
7
t
CK
2 Clock min.
Precharge
All Banks
Mode
Register Set
t
RP
*2
*1
Any
Command
CK
CK
Burst Address Ordering for Burst Length
Burst
Length
Starting
Address(A2, A1, A0)
xx0
xx1
x00
x01
x10
x11
000
001
010
011
100
101
110
111
Sequential Mode
Interleave Mode
2
0, 1
1, 0
0, 1
1, 0
4
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
8
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7, 0
2, 3, 4, 5, 6, 7, 0, 1
3, 4, 5, 6, 7, 0, 1, 2
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 0, 1, 2, 3, 4
6, 7, 0, 1, 2, 3, 4, 5
7, 0, 1, 2, 3, 4, 5, 6
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and
upon returing to normal operation after having disabled the DLL for the purpose of debug or evaluation (upon
exiting Self Refresh Mode, the DLL is enabled automatically). Any time the DLL is enabled, 200 clock cycles
must occur before a READ command can be issued.
Output Drive Strength
The normal drive strength for all outputs is specified to be SSTL_2, Class II. Some vendors might also support
a weak driver strength option, intended for lighter load and/or point-to-point environments. I-V curves for the
normal drive strength and weak drive strength will be included in a future revision of this document.
Table 4. Burst address ordering for burst length
Figure 6. Mode Register Set sequence
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H1G0838M-TCA0 | 128Mb DDR SDRAM |
| K4H641638M-TCA0 | DIODE ZENER DUAL COMMON-CATHODE 300mW 6.8Vz 5mA-Izt 0.0588 0.1uA-Ir 3 SOT-23 3K/REEL |
| K4H281638M-TCA0 | DIODE ZENER DUAL COMMON-CATHODE 300mW 7.5Vz 5mA-Izt 0.0604 0.1uA-Ir 5 SOT-23 3K/REEL |
| K4H1G1638M-TCA0 | 128Mb DDR SDRAM |
| K4H643238M-TCA0 | DIODE ZENER DUAL COMMON-CATHODE 300mW 9.1Vz 5mA-Izt 0.0608 0.1uA-Ir 7 SOT-23 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H280838M-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280838M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280838M-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280838M-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280838M-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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