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參數(shù)資料
| 型號： | K4F641612E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 4米× 16位的CMOS動態(tài)隨機(jī)存儲器的快速頁面模式 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大?。?/td> | 400K |
| 代理商： | K4F641612E |
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CMOS DRAM
K4F661612E,
K4F641612E
Industrial Temperature
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung
′
s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
Fast Page Mode operation
2CAS Byte/Word Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability
LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic TSOP(II) packages
+3.3V
±
0.3V power supply
Industrial Temperature operating
( -40~85
°
C
)
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
Control
Clocks
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Memory Array
4,194,304 x 16
Cells
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
S
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ
8
to
DQ15
OE
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Part Identification
- K4F661612E-TI/P(3.3V, 8K Ref.)
- K4F641612E-TI/P(3.3V, 4K Ref.)
FEATURES
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
L-ver
K4F661612E*
K4F641612E
8K
4K
64ms
128ms
Performance Range
Speed
-45
-50
-60
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
Active Power Dissipation
Speed
-45
-50
-60
8K
324
288
252
4K
468
432
396
Unit : mW
*
Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F661612E | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4H1G0838A-TCA0 | DIODE ZENER SINGLE 200mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-323 3K/REEL |
| K4H641638A-TCA0 | DIODE ZENER SINGLE 150mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-523 3K/REEL |
| K4H281638A-TCA0 | DIODE ZENER SINGLE 500mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-123 3K/REEL |
| K4H1G1638A-TCA0 | DIODE ZENER SINGLE 500mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-123 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4F660412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660811B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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