參數(shù)資料
型號： K4H640438A-TLA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:4.7"; External Width:3.1"; External Depth:2.2"; Enclosure Color:Gray
中文描述： 128MB DDR SDRAM的
文件頁數(shù)： 15/53頁
文件大小： 669K
代理商： K4H640438A-TLA2
- 15 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.2.2 Mode Register Definition
3.2.2.1 Mode Register Set(MRS)
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs
CAS latency, addressing mode, burst length, test mode, DLL reset and various vendor specific options to make
DDR SDRAM useful for variety of different applications. The default value of the mode register is not defined,
therefore the mode register must be written after EMRS setting for proper DDR SDRAM operation. The mode
register is written by asserting low on CS, RAS, CAS, WE and BA0(The DDR SDRAM should be in all bank pre-
charge with CKE already high prior to writing into the mode register). The states of address pins A0 ~ A11 in
the same cycle as CS, RAS, CAS, WE and BA0 going low are written in the mode register. Two clock cycles
are requested to complete the write operation in the mode register. The mode register contents can be
changed using the same command and clock cycle requirements during operation as long as all banks are in
the idle state. The mode register is divided into various fields depending on functionality. The burst length uses
A0 ~ A2, addressing mode uses A3, CAS latency(read latency from column address) uses A4 ~ A6. A7 is used
for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. Refer to the table for
specific codes for various burst lengths, addressing modes and CAS latencies.
Address Bus
CAS Latency
A
6
0
0
0
0
1
1
1
1
A
5
0
0
1
1
0
0
1
1
A
4
0
1
0
1
0
1
0
1
Latency
Reserved
Reserved
2
Reserved
Reserved
Reserved
2.5
Reserved
Burst Length
A
2
A
1
A
0
Latency
Sequential
Reserve
2
4
8
Reserve
Reserve
Reserve
Reserve
Interleave
Reserve
2
4
8
Reserve
Reserve
Reserve
Reserve
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
A
7
0
1
mode
Normal
Test
A
3
0
1
Burst Type
Sequential
Interleave
* RFU(Reserved for future use)
should stay "0" during MRS
cycle.
A
8
0
1
DLL Reset
No
Yes
Mode Register
BA
1
BA
0
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
RFU
TM
CAS Latency
BT
Burst Length
RFU
DLL
0
BA
0
0
1
A
n
~ A
0
(Existing)MRS Cycle
Extended Funtions(EMRS)
Figure 5. Mode Register Set
相關PDF資料
PDF描述
K4H640438A-TLB0 Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:4.7"; External Width:3.1"; External Depth:3.3"; Enclosure Color:Gray
K4H640438B-TCA0 Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:6.2"; External Width:3.1"; External Depth:2.1"; Enclosure Color:Gray; Cover Color:Gray RoHS Compliant: Yes
K4H640438B-TCA2 Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:6.2"; External Width:3.1"; External Depth:3.3"; Enclosure Color:Gray
K4H640438B-TCB0 MNX Series Enclosure; NEMA Type:1, 4, 4X, 6; Enclosure Material:Polycarbonate; External Height:1.4"; External Width:3.1"; External Depth:5.1"; Enclosure Color:Light Gray
K4H640438B-TLA0 MNX Series Enclosure; NEMA Type:1, 4, 4X, 6; Enclosure Material:Polycarbonate; External Height:1.4"; External Width:3.1"; External Depth:5.1"; Enclosure Color:Light Gray
相關代理商/技術參數(shù)
參數(shù)描述
K4H640438A-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438B-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438B-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438B-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438B-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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