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| 型號： | ADT7462ACPZ-500RL7 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 溫度/濕度傳感器 |
| 英文描述： | DIGITAL TEMP SENSOR-SERIAL, 8BIT(s), 4Cel, SQUARE, SURFACE MOUNT |
| 封裝： | 5 X 5 MM, LFCSP-32 |
| 文件頁數(shù)： | 15/88頁 |
| 文件大?。?/td> | 836K |
| 代理商： | ADT7462ACPZ-500RL7 |
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ADT7462
Rev. 2 | Page 22 of 88 | www.onsemi.com
TEMPERATURE AND VOLTAGE MEASUREMENT
TEMPERATURE MEASUREMENT
The ADT7462 can measure its own ambient temperature and
the temperature of up to three remote thermal diodes. These
diodes can be discrete diode-connected 2N3904/2N3906s or
they can be located on a processor die. Figure 33 shows how
to connect a remote NPN or PNP transistor.
D+
D–
ADT7462
2N3904
D+
D–
ADT7462
2N3906
05
569-
023
Figure 33. How to Measure Temperature Using Discrete Transistors
Remote Thermal Diode 1 connects to Pin 15 and Pin 16.
Remote Thermal Diode 2 connects to Pin 17 and Pin 18.
Remote Thermal Diode 3 connects to Pin 19 and Pin 20.
A simple method of measuring temperature is to exploit the
negative temperature coefficient of a diode, measuring the base-
emitter voltage (VBE) of a transistor, operated at constant
current. Unfortunately, this technique requires calibration to
cancel the effect of the absolute value of VBE, which varies from
device to device.
The technique used in the ADT7462 is to measure the change
in VBE when the device is operated at three different currents.
Previous devices have used only two operating currents;
use of a third current allows automatic cancellation of any
resistances in series with the external temperature sensor.
Figure 34 shows the input signal conditioning used to measure
the output of an external temperature sensor. This figure shows
the external sensor as a substrate transistor, but it could equally
be a discrete transistor. If a discrete transistor is used, the
collector is not grounded and should be linked to the base.
To prevent ground noise from interfering with the measurement,
the more negative terminal of the sensor is not referenced to
ground but is biased above ground by an internal diode at
the D input. C1 can optionally be added as a noise filter
(recommended maximum value 1000 pF). However, a better
option in noisy environments is to add a filter, as described in
the Noise Filtering section.
To measure ΔVBE, the operating current through the sensor is
switched among three related currents. As shown in Figure 34,
N1 × I and N2 × I are different multiples of the Current I. The
currents through the temperature diode are switched between
I and N1 × I, giving ΔVBE1, and then between I and N2 × I,
giving ΔVBE2. The temperature can then be calculated using
the two ΔVBE measurements. This method can also be shown
to cancel the effect of any series resistance on the temperature
measurement.
The resulting ΔVBE waveforms are passed through a 65 kHz
low-pass filter to remove noise and then to a chopper-stabilized
amplifier. This amplifies and rectifies the waveform to produce
a dc voltage proportional to ΔVBE. The ADC digitizes this
voltage, and a temperature measurement is produced. To reduce
the effects of noise, digital filtering is performed by averaging
the results of 16 measurement cycles for low conversion rates.
Signal conditioning and measurement of the internal tempera-
ture sensor are performed in the same manner (see Figure 34).
Temperature Measurement Results
The results of the local and remote temperature measurements
are stored in the local and remote temperature value registers
and are compared with limits programmed into the local and
remote high and low limit registers.
Table 12. Temperature Measurement Registers
Temperature Value
Register Address
Local Temperature, LSB
Register 0x88, Bits [7:6]
Local Temperature, MSB
Register 0x89
Remote 1 Temperature, LSB
Register 0x8A, Bits [7:6]
Remote 1 Temperature, MSB
Register 0x8B
Remote 2 Temperature, LSB
Register 0x8C, Bits [7:6]
Remote 2 Temperature, MSB
Register 0x8D
Remote 3 Temperature, LSB
Register 0x8E, Bits [7:6]
Remote 3 Temperature, MSB
Register 0x8F
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