參數(shù)資料
型號: PSD913F2
英文描述: 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7260 with optional Total Dose Rating of 300kRads
中文描述: 可配置的存儲系統(tǒng)級芯片的8位微控制器
文件頁數(shù): 85/94頁
文件大?。?/td> 463K
代理商: PSD913F2
PSD913F1
Preliminary
84
Symbol
Parameter
1
Conditions Typical
2
Max
Unit
C
IN
C
OUT
C
VPP
Capacitance (for input pins only)
V
IN
= 0 V
V
OUT
= 0 V
V
PP
= 0 V
4
6
pF
Capacitance (for input/output pins)
8
12
pF
Capacitance (for CNTL2/V
PP
)
18
25
pF
NOTES:
1. These parameters are only sampled and are not 100% tested.
2. Typical values are for T
A
= 25
°
C and nominal supply voltages.
T
A
= 25 °C, f = 1 MHz
Pin Capacitance
Figure 35.
AC Testing
Input/Output
Waveform
Figure 36.
AC Testing
Load Circuit
Programming
3.0V
0V
TEST POINT
1.5V
DEVICE
UNDER TEST
2.01 V
195
C
L
= 30 pF
(INCLUDING
SCOPE AND JIG
CAPACITANCE)
Upon delivery from ST, the PSD913F1 device has all bits in the PLDs and memories in the
1
or high state. The configuration bits are in the
0
or low state. The code, configuration,
and PLDs logic are loaded through the procedure of programming.
Information for programming the device is available directly from ST. Please contact your
local sales representative. (See the last page.)
相關(guān)PDF資料
PDF描述
PSD913F2V 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA7260 with Standard Packaging
PSD913F2(中文) Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng))
PSD934F2(中文) Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng))
PSD913F2 Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng))
PSD934F2 Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng))
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