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參數(shù)資料
| 型號： | PSD913F2 |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7260 with optional Total Dose Rating of 300kRads |
| 中文描述： | 可配置的存儲系統(tǒng)級芯片的8位微控制器 |
| 文件頁數(shù)： | 62/94頁 |
| 文件大小： | 463K |
| 代理商： | PSD913F2 |
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Preliminary
PSD913F1
61
The
PSD913F1
Functional
Blocks
(cont.)
9.5.3 Reset and Power On Requirement
Power On Reset
Upon power up the PSD913F1 requires a reset pulse of tNLNH-PO (minimum 1ms) after
V
CC
is steady. During this time period the device loads internal configurations, clears some
of the registers and sets the Flash or EEPROM into operating mode. After the rising edge of
reset, the PSD913F1 remains in the reset state for an additional tOPR (minimum 120 ns)
nanoseconds before the first memory access is allowed.
The PSD913F1 Flash or EEPROM memory is reset to the read array mode upon power up.
The FSi and EESi select signals along with the write strobe signal must be in the false state
during power-up reset for maximum security of the data contents and to remove the possi-
bility of a byte being written on the first edge of a write strobe signal. The PSD
automatically prevents write strobes from reaching the EEPROM memory array for about
5 ms (tEEHWL). Any Flash memory write cycle initiation is prevented automatically when
V
CC
is below VLKO.
Warm Reset
Once the device is up and running, the device can be reset with a much shorter pulse of
tNLNH (minimum 150 ns). The same tOPR time is needed before the device is operational
after warm reset. Figure 27 shows the timing of the power on and warm reset.
OPERATING LEVEL
POWER ON RESET
V
CC
RESET
tNLNH
–
PO
tOPR
tNLNH
tOPR
WARM
RESET
Figure 27. Power On and Warm Reset Timing
I/OPin, Register and PLD Status at Reset
Table 29 shows the I/O pin, register and PLD status during power on reset, warm reset and
power down mode. PLD outputs are always valid during warm reset, and they are valid in
power on reset once the internal PSD configuration bits are loaded. This loading of PSD is
completed typically long before the V
CC
ramps up to operating level. Once the PLD is
active, the state of the outputs are determined by the PSDsoft equations.
相關PDF資料 |
PDF描述 |
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| PSD913F2V | 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA7260 with Standard Packaging |
| PSD913F2(中文) | Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng)) |
| PSD934F2(中文) | Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng)) |
| PSD913F2 | Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng)) |
| PSD934F2 | Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng)) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PSD913F2-12B81 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD913F2-12B81I | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD913F2-12J | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD913F2-12JI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD913F2-12JIT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
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