參數(shù)資料
型號(hào)： PSD913F2
英文描述： 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7260 with optional Total Dose Rating of 300kRads
中文描述： 可配置的存儲(chǔ)系統(tǒng)級(jí)芯片的8位微控制器
文件頁(yè)數(shù)： 28/94頁(yè)
文件大?。?/td> 463K
代理商： PSD913F2
Preliminary
PSD913F1
27
The
PSD913F1
Functional
Blocks
(cont.)
9.1.1.8 Erasing Flash Memory
9.1.1.8.1. Flash Bulk Erase Instruction
The Flash Bulk Erase instruction uses six write operations followed by a Read operation of
the status register, as described in Table 9. If any byte of the Bulk Erase instruction is wrong,
the Bulk Erase instruction aborts and the device is reset to the Read Flash memory status.
During a Bulk Erase, the memory status may be checked by reading status bits DQ5, DQ6,
and DQ7, as detailed in section 9.1.1.7. The Error bit (DQ5) returns a
‘
1
’
if there has been
an Erase Failure (maximum number of erase cycles have been executed).
It is not necessary to program the array with 00h because the PSD913F1 will automatically
do this before erasing to 0FFh.
During execution of the Bulk Erase instruction, the Flash memory will not accept any
instructions.
9.1.1.8.2 Flash Sector Erase Instruction
The Sector Erase instruction uses six write operations, as described in Table 9. Additional
Flash Sector Erase confirm commands and Flash sector addresses can be written
subsequently to erase other Flash sectors in parallel, without further coded cycles, if the
additional instruction is transmitted in a shorter time than the timeout period of about
100 μs. The input of a new Sector Erase instruction will restart the time-out period.
The status of the internal timer can be monitored through the level of DQ3 (Erase time-out
bit). If DQ3 is
‘
0
’
, the Sector Erase instruction has been received and the timeout is
counting. If DQ3 is
‘
1
’
, the timeout has expired and the PSD913F1 is busy erasing the Flash
sector(s). Before and during Erase timeout, any instruction other than Erase suspend and
Erase Resume will abort the instruction and reset the device to Read Array mode. It is not
necessary to program the Flash sector with 00h as the PSD913F1 will do this automatically
before erasing (byte=FFh).
During a Sector Erase, the memory status may be checked by reading status bits DQ5,
DQ6, and DQ7, as detailed in section 9.1.1.7.
During execution of the erase instruction, the Flash block logic accepts only Reset and
Erase Suspend instructions. Erasure of one Flash sector may be suspended, in order to
read data from another Flash sector, and then resumed.
9.1.1.8.3 Flash Erase Suspend Instruction
When a Flash Sector Erase operation is in progress, the Erase Suspend instruction will
suspend the operation by writing 0B0h to any address when an appropriate Chip Select
(FSi) is true. (See Table 9). This allows reading of data from another Flash sector after the
Erase operation has been suspended. Erase suspend is accepted only during the Flash
Sector Erase instruction execution and defaults to read array mode. An Erase Suspend
instruction executed during an Erase timeout will, in addition to suspending the erase,
terminate the time out.
The Toggle Bit DQ6 stops toggling when the PSD913F1 internal logic is suspended. The
toggle Bit status must be monitored at an address within the Flash sector being erased. The
Toggle Bit will stop toggling between 0.1 μs and 15 μs after the Erase Suspend instruction
has been executed. The PSD913F1 will then automatically be set to Read Flash Block
Memory Array mode.
If an Erase Suspend instruction was executed, the following rules apply:
Attempting to read from a Flash sector that was being erased will output invalid data.
Reading from a Flash sector that was
not
being erased is valid.
The Flash memory
cannot
be programmed, and will only respond to Erase Resume
and Reset instructions (read is an operation and is OK).
If a Reset instruction is received, data in the Flash sector that was being erased will
be invalid.
相關(guān)PDF資料
PDF描述
PSD913F2V 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA7260 with Standard Packaging
PSD913F2(中文) Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲(chǔ)器系統(tǒng))
PSD934F2(中文) Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲(chǔ)器系統(tǒng))
PSD913F2 Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲(chǔ)器系統(tǒng))
PSD934F2 Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲(chǔ)器系統(tǒng))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSD913F2-12B81 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD913F2-12B81I 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD913F2-12J 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD913F2-12JI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD913F2-12JIT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*