
PDF: 09005aef8091e66d/Source: 09005aef8091e625
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MSDRAM_2.fm - Rev. N 1/09 EN
49
1999 Micron Technology, Inc. All rights reserved.
128Mb: x4, x8, x16 SDRAM
Electrical Specifications
Table 14:
DC Electrical Characteristics and Operating Conditions
Parameter/Condition
Symbol
Min
Max
Units
Notes
Supply voltage
VDD/VDDQ3
3.6
V
Input high voltage: Logic 1; All inputs
VIH
2VDD + 0.3
V
Input low voltage: Logic 0; All inputs
VIL
–0.3
0.8
V
Input leakage current: Any input 0V
≤ VIN ≤ VDD (All other
pins not under test = 0V)
II
–5
5
A
Output leakage current: DQ are disabled; 0V
≤ VOUT ≤ VDDQ
IOZ
–5
5
A
Output levels:
Output high voltage (IOUT = –4mA)
Output low voltage (IOUT = 4mA)
VOH
2.4
–
V
VOL
–0.4
V
Table 15:
IDD Specifications and Conditions
Parameter/Condition
Symbol
Max
Units
Notes
-6A
-7E
-75
Operating current: Active mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
170
160
150
mA
Standby current: Power-down mode;
All banks idle; CKE = LOW
IDD2
222
mA
Standby current: Active mode;
CKE = HIGH; CS# = HIGH; All banks active after tRCD met; No
accesses in progress
IDD3
50
mA
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
IDD4
165
150
mA
Auto refresh current:
CKE = HIGH; CS# = HIGH
tRFC = tRFC (MIN)
IDD5
330
310
mA
tRFC = 15.625s
IDD6
333
mA
tRFC = 3.906s(AT)
IDD6
666
mA
Self refresh current:
CKE
≤ 0.2V
Standard
IDD7
222
mA
Low power (L)
IDD7–
1
mA
Table 16:
Capacitance
Parameter – TSOP “TG” Package
Symbol
Min
Max
Units
Notes
Input capacitance: CLK
CI12.5
3.5
pF
Input capacitance: All other input-only pins
CI22.5
3.8
pF
Input/output capacitance: DQ
CIO
4.0
6.0
pF
Parameter – FBGA “FB”
Input capacitance: CLK
CI11.5
3.5
pF
Input capacitance: All other input-only pins
CI21.5
3.8
pF