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128MSDRAM_2.fm - Rev. N 1/09 EN
34
1999 Micron Technology, Inc. All rights reserved.
128Mb: x4, x8, x16 SDRAM
Operations
Figure 23:
WRITE-to-READ
Data for a fixed-length WRITE burst may be followed by, or truncated with, a
PRECHARGE command to the same bank (provided that auto precharge was not acti-
vated), and a full-page WRITE burst may be truncated with a PRECHARGE command to
the same bank. The PRECHARGE command should be issued tWR after the clock edge at
which the last desired input data element is registered. The auto precharge mode
requires a tWR of at least 1 clock plus time (see note 24 on page 52), regardless of frequency. In addition, when truncating a WRITE burst, the DQM signal must be used to
mask input data for the clock edge prior to, and the clock edge coincident with, the
either the last of a burst of two or the last desired of a longer burst. Following the
PRECHARGE command, a subsequent command to the same bank cannot be issued
until tRP is met.
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE
command. When truncating a WRITE burst, the input data applied coincident with the
BURST TERMINATE command will be ignored. The last data written (provided that
DQM is LOW at that time) will be the input data applied 1 clock previous to the BURST
desired data element of a longer burst.
DON’T CARE
CLK
DQ
T2
T1
T3
T0
COMMAND
ADDRESS
NOP
WRITE
BANK,
COL n
DIN
n
DIN
n + 1
DOUT
b
READ
NOP
BANK,
COL b
NOP
DOUT
b + 1
T4
T5
TRANSITIONING DATA