參數(shù)資料
型號: MC68HC11F1CPU4
廠商: Freescale Semiconductor
文件頁數(shù): 109/158頁
文件大?。?/td> 0K
描述: IC MCU 512 EEPROM 4MHZ 80-LQFP
標(biāo)準(zhǔn)包裝: 90
系列: HC11
核心處理器: HC11
芯體尺寸: 8-位
速度: 4MHz
連通性: SCI,SPI
外圍設(shè)備: POR,WDT
輸入/輸出數(shù): 30
程序存儲(chǔ)器類型: ROMless
EEPROM 大小: 512 x 8
RAM 容量: 1K x 8
電壓 - 電源 (Vcc/Vdd): 4.75 V ~ 5.25 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x8b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 80-LQFP
包裝: 托盤
OPERATING MODES AND ON-CHIP MEMORY
MC68HC11F1
4-16
TECHNICAL DATA
4.4.1.4 EEPROM Byte Erase
The following is an example of how to erase a single byte of EEPROM and assumes
that index register X contains the address of the byte to be erased.
4.4.2 PPROG EEPROM Programming Control Register
Bits in PPROG register control parameters associated with EEPROM programming.
ODD — Program Odd Rows in Half of EEPROM (TEST)
EVEN — Program Even Rows in Half of EEPROM (TEST)
Bit 5 — Not implemented
Always reads zero
BYTE — Byte/Other EEPROM Erase Mode
0 = Row or bulk erase mode used
1 = Erase only one byte of EEPROM
ROW — Row/All EEPROM Erase Mode (only valid when BYTE = 0)
0 = All 512 bytes of EEPROM erased
1 = Erase only one 16-byte row of EEPROM
ROWE
LDAB
#$0E
ROW=1, ERASE=1, EELAT=1, EEPGM=0
STAB
$103B
Set to ROW erase mode
STAB
0,X
Store any data to any address in ROW
LDAB
#$0F
ROW=1, ERASE=1, EELAT=1, EEPGM=1
STAB
$103B
Turn on high voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
BYTEE
LDAB
#$16
BYTE=1, ROW=0, ERASE=1, EELAT=1, EEPGM=0
STAB
$103B
Set to BYTE erase mode
STAB
0,X
Store any data to address to be erased
LDAB
#$17
BYTE=1, ROW=0, ERASE=1, EELAT=1, EEPGM=1
STAB
$103B
Turn on high voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
PPROG — EEPROM Programming Control
$103B
Bit 7
654321
Bit 0
ODD
EVEN
BYTE
ROW
ERASE
EELAT
EEPGM
RESET:
0000000
0
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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