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參數(shù)資料
| 型號： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 19/46頁 |
| 文件大?。?/td> | 768K |
| 代理商： | K1B6416B6C |
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Revision 1.0
January 2005
K1B6416B6C
- 19 -
U
t
RAM
Table 16. CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
Table 17. DC AND OPERATING CHARACTERISTICS
1. Full Array Partial Refresh Current(
I
SBP
) is same as Standby Current(
I
SB1
).
2. Standby mode is supposed to be set up after at least one active operation.after power up.
I
SB1
is measured after 60ms from the time when standby mode is set up.
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
I
LI
V
IN
=Vss to V
CCQ
-1
-
1
μ
A
Output Leakage Current
I
LO
CS=V
IH,
MRS=V
IH
, OE=V
IH
or WE=V
IL
, V
IO
=Vss to V
CCQ
-1
-
1
μ
A
Average Operating
Current(Async)
I
CC2
Cycle time=t
RC
+3t
PC
, I
IO
=0mA, 100% duty, CS=V
IL
, MRS=V
IH,
V
IN
=V
IL
or V
IH
-
-
40
mA
Average Operating
Current(Sync)
I
CC3
Burst Length 4, Latency 5, 66MHz, I
IO
=0mA, Address transi-
tion 1 time, CS=V
IL
, MRS=V
IH,
V
IN
=V
IL
or V
IH
-
-
40
mA
Output Low Voltage
V
OL
I
OL
=0.1mA
-
-
0.2
V
Output High Voltage
V
OH
I
OH
=-0.1mA
1.4
-
-
V
Standby Current(CMOS)
I
SB1
2)
CS
≥
V
CCQ
-0.2V, MRS
≥
V
CCQ
-0.2V, Other
inputs=Vss to V
CCQ
< 40
°
C
-
-
120
μ
A
< 85
°
C
-
-
180
μ
A
Partial Refresh Current
I
SBP
1)
MRS
≤
0.2V, CS
≥
V
CCQ
-0.2V
Other inputs=Vss to V
CCQ
< 40
°
C
3/4 Block
-
-
120
μ
A
1/2 Block
-
-
115
1/4 Block
-
-
115
< 85
°
C
3/4 Block
-
-
180
μ
A
1/2 Block
-
-
165
1/4 Block
-
-
165
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