- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374252 > K1B6416B6C (SAMSUNG SEMICONDUCTOR CO. LTD.) 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory PDF資料下載
參數(shù)資料
| 型號： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 20/46頁 |
| 文件大?。?/td> | 768K |
| 代理商： | K1B6416B6C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
Revision 1.0
January 2005
K1B6416B6C
- 20 -
U
t
RAM
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.2 to V
CC
-0.2V
Input rising and falling time: 3ns
Input and output reference voltage: 0.5 x V
CC
Output load: C
L
=30pF
Table 18. ASYNCHRONOUS AC CHARACTERISTICS
(V
CC
=1.7~2.0V, T
A
=-40 to 85
°
C)
1. t
WP
(min)=70ns for continuous write operation over 50 times.
Parameter List
Symbol
Speed
Units
Min
Max
Common
CS High Pulse Width
Read Cycle Time
Page Read Cycle Time
t
CSHP(A)
t
RC
t
PC
10
70
25
-
-
-
ns
ns
ns
Async.
(Page)
Read
Address Access Time
Page Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold
Write Cycle Time
Chip Select to End of Write
ADV Minimum Low Pulse Width
Address Set-up Time to Beginning of Write
Address Set-up Time to ADV Falling
Address Hold Time from ADV Rising
t
AA
t
PA
t
CO
t
OE
t
BA
t
LZ
t
BLZ
t
OLZ
t
CHZ
t
BHZ
t
OHZ
t
OH
t
WC
t
CW
t
ADV
t
AS
t
AS(A)
t
AH(A)
-
-
-
-
-
70
20
70
35
35
-
-
-
12
12
12
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
5
5
0
0
0
3
70
60
7
0
0
7
Async.
Write
CS Setup Time to ADV Rising
Address Valid to End of Write
UB, LB Valid to End of Write
Write Pulse Width
WE High Pulse Width
Write Recovery Time
WE Low to Read Latency
Data to Write Time Overlap
Data Hold from Write Time
t
CSS(A)
t
AW
t
BW
t
WP
t
WHP
t
WR
t
WLRL
t
DW
t
DH
10
60
60
-
-
-
-
ns
ns
ns
ns
-
ns
55
1)
5 ns
0
1
30
0
Latency-1 clock
-
-
-
-
clock
ns
ns
Figure 14. AC Output Load Circuit
Vtt=0.5 x VCC
50
Dout
30pF
Z0=50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S161611A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S161611A-I | Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 8x5 mm; Packaging: Bulk |
| K1S16161CA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S16161CA-I | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1BAAAAAAA | 制造商:OTTO Engineering Inc 功能描述:SCREW,RED ROCKERON-NONE-OFF,SPST,NO LIGHTS OR LEGENDS |
| K1BAAAAAAR | 制造商:OTTO Engineering Inc 功能描述:SRW/STD RED RKR,ON-NONE-OFF,SPST, NOLENS,NO LGHT,W/LEGND |
| K1BAAPCCFA | 制造商:OTTO Engineering Inc 功能描述:SPST RED ROCK, ON-OF12V GRN LED, 2 GRNLENS DEPENDENT |
| K1BABAAAAD | 制造商:OTTO Engineering Inc 功能描述:RockerSwitch Snap In 1-C NONE 2-C SPDT 制造商:OTTO Engineering Inc 功能描述:SCR STD TERMS,RED RKR,ON-NONE-ON-NO LIGHT |
| K1BABPCCFA | 制造商:OTTO Engineering Inc 功能描述:SPST RED ROCK, ON-ON12V GRN LED, 2 GRNLENS DEPENDENT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。