參數(shù)資料
型號: K1B6416B6C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
中文描述: 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機存取存儲器
文件頁數(shù): 46/46頁
文件大小: 768K
代理商: K1B6416B6C
Revision 1.0
January 2005
K1B6416B6C
- 46 -
U
t
RAM
C
PACKAGE DIMENSION
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B/2
B
C
B
C
Bottom View
Top View
D
E
E
E
C
Side View
0
0
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
7.90
8.00
8.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
-
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.10
B1
#A1
Notes.
1. Bump counts: 54(9 row x 6 column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are
±
0.050 unless
specified beside figures.
4. Typ : Typical
5. Y is coplanarity: 0.10(Max)
Unit: millimeters
54 BALL FINE PITCH BGA(0.75mm ball pitch)
J
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