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參數(shù)資料
| 型號(hào)： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 21/46頁(yè) |
| 文件大小： | 768K |
| 代理商： | K1B6416B6C |
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Revision 1.0
January 2005
K1B6416B6C
- 21 -
U
t
RAM
ASYNCHRONOUS READ TIMING WAVEFORM
(ASYNCHRONOUS READ CYCLE)
1.
t
CHZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition,
t
CHZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
3. In asynchronous read cycle, Clock, ADV and WAIT signals are ignored.
Fig.15 TIMING WAVEFORM OF ASYNCHRONOUS READ CYCLE
(MRS=V
IH,
WE=V
IH
, WAIT=High-Z)
Data Valid
High-Z
t
RC
t
OH
t
AA
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
CHZ
t
CO
Address
CS
UB, LB
OE
Data out
Table 19. ASYNCHRONOUS READ AC CHARACTERISTICS
Symbol
Speed
Units
Symbol
Speed
Units
Min
Max
Min
Max
t
RC
t
AA
t
CO
t
BA
t
OE
t
OH
70
-
-
-
-
3
10
-
ns
ns
ns
ns
ns
ns
ns
t
OLZ
t
BLZ
t
LZ
t
CHZ
t
BHZ
t
OHZ
5
5
-
-
-
ns
ns
ns
ns
ns
ns
70
70
35
35
-
-
10
0
0
0
12
12
12
t
CSHP(A)
t
CSHP(A)
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