參數(shù)資料
型號: HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對移動應用256兆移動RAM
文件頁數(shù): 53/58頁
文件大?。?/td> 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
53
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
3.4
Pullup and Pulldown Characteristics
TABLE 29
Half Drive Strength and Full Drive Strength
The above characteristics are specified under nominal process variation / condition
Temperature (Tj): Nominal = 50
°
C,
V
DDQ
: Nominal = 1.80 V
Voltag
e (V)
Half Drive Strength
Full Drive Strength
Pull-Down Current (mA)
Pull-Up Current (mA)
Pull-Down Current (mA)
Pull-Up Current (mA)
Nominal
Low
Nominal
High
Nominal
Low
Nominal
High
Nominal
Low
Nominal
High
Nominal
Low
Nominal
High
0.00
0.40
0.65
0.85
1.00
1.40
1.50
1.65
1.80
1.95
0.0
15.1
20.3
22.0
22.6
23.5
23.6
23.8
23.9
24.0
0.0
20.5
28.5
32.0
33.5
35.0
35.3
35.5
35.7
35.9
-19.7
-18.8
-18.2
-17.6
-16.7
-9.4
-6.6
-1.8
3.8
9.8
-33.4
-32.0
-31.0
-29.9
-28.7
-20.4
-17.1
-11.4
-4.8
2.5
0.0
30.2
40.5
43.9
45.2
46.9
47.2
47.5
47.7
48.0
0.0
41.0
57.0
64.0
67.0
70.0
70.5
71.0
71.4
71.8
-39.3
-37.6
-36.4
-35.1
-33.3
-18.8
-13.2
-3.5
7.5
19.6
-66.7
-63.9
-61.9
-59.8
-57.3
-40.7
-34.1
-22.7
-9.6
5.0
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