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| 型號(hào)： | HYB18L256160B |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| 中文描述： | DRAM的針對(duì)移動(dòng)應(yīng)用256兆移動(dòng)RAM |
| 文件頁數(shù)： | 18/58頁 |
| 文件大小： | 1766K |
| 代理商： | HYB18L256160B |
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Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
18
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.4
ACTIVE
Before any READ or WRITE commands can be issued to a
bank within the Mobile-RAM, a row in that bank must be
“opened” (activated). This is accomplished via the ACTIVE
command and addresses A0 - A12, BA0 and BA1 (see
Figure 9
), which decode and select both the bank and the
row to be activated. After opening a row (issuing an ACTIVE
command), a READ or WRITE command may be issued to
that row, subject to the
t
RCD
specification. A subsequent
ACTIVE command to a different row in the same bank can
only be issued after the previous active row has been “closed”
(precharged).
The minimum time interval between successive ACTIVE
commands to the same bank is defined by
t
RC
. A subsequent
ACTIVE command to another bank can be issued while the
first bank is being accessed, which results in a reduction of
total row-access overhead. The minimum time interval
between successive ACTIVE commands to different banks is
defined by
t
RRD
.
FIGURE 9
ACTIVE command
FIGURE 10
Bank Activate Timings
TABLE 11
Timing Parameters for ACTIVE Command
'RQW &DUH
%$ %DQN $G GUHVV
5$ 5RZ $G GUHVV
%$ %$
%$
$ $
5$
:(
&$6
5$6
&6
&.(
+LJK
&/.
Parameter
Symbol
- 7.5
Units
Note
min.
max.
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE bank A to ACTIVE bank B delay
t
RC
t
RCD
t
RRD
67
19
15
—
—
—
ns
ns
ns
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
1)
1)
W
55'
W
5&'
'RQW &DUH
&/.
5' :5
123
123
123
$& 7
123
$& 7
&RPPDQG
52:
52:
&2/
$ $
%$ [
%$ \
%$ \
%$
%$
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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