參數(shù)資料
型號(hào): HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對(duì)移動(dòng)應(yīng)用256兆移動(dòng)RAM
文件頁(yè)數(shù): 43/58頁(yè)
文件大?。?/td> 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
43
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.10
POWER DOWN
Power-down is entered when CKE is registered LOW (no
accesses can be in progress). If power-down occurs when all
banks are idle, this mode is referred to as precharge power-
down; if power-down occurs when there is a row active in any
bank, this mode is referred to as active power-down. Entering
power-down deactivates the input and output buffers,
excluding CLK and CKE.
Power-down duration is limited by the refresh requirements of
the device (ddd
t
REF
). CKE LOW must be maintained during
power-down.
The power-down state is synchronously exited when CKE is
registered HIGH (along with a NOP or DESELECT
command). One clock delay is required for power down entry
and exit.
FIGURE 45
Power Down Entry Command
FIGURE 46
Power Down Entry and Exit
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