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參數(shù)資料
| 型號： | HYB18L256160B |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| 中文描述： | DRAM的針對移動應用256兆移動RAM |
| 文件頁數(shù)： | 27/58頁 |
| 文件大?。?/td> | 1766K |
| 代理商： | HYB18L256160B |
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Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
27
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.5.5
READ to PRECHARGE
A READ burst may be followed by, or truncated with a PRECHARGE command to the same bank, provided that Auto
Precharge was not activated. This is shown in
Figure 22
.
The PRECHARGE command should be issued x clock cycles before the clock edge at which the last desired data element is
valid, where x equals the CAS latency for READ bursts minus 1. Following the PRECHARGE command, a subsequent ACTIVE
command to the same bank cannot be issued until
t
RP
is met. Please note that part of the row precharge time is hidden during
the access of the last data elements.
In the case of a READ being executed to completion, a PRECHARGE command issued at the optimum time (as described
above) provides the same operation that would result from the same READ burst with Auto Precharge enabled. The
disadvantage of the PRECHARGE command is that it requires that the command and address busses be available at the
appropriate time to issue the command. The advantage of the PRECHARGE command is that it can be used to truncate bursts.
FIGURE 22
READ to PRECHARGE Timing
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123
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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