參數(shù)資料
型號： HYB18L256160B
廠商： QIMONDA
英文描述： DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述： DRAM的針對移動應用256兆移動RAM
文件頁數(shù)： 21/58頁
文件大?。?/td> 1766K
代理商： HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
21
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
FIGURE 14
Single READ Burst (CAS Latency = 3)
Data from any READ burst may be concatenated with data from a subsequent READ command. In either case, a continuous
flow of data can be maintained. A READ command can be initiated on any clock cycle following a previous READ command,
and may be performed to the same or a different (active) bank. The first data element from the new burst follows either the last
element of a completed burst (
Figure 15
) or the last desired data element of a longer burst which is being truncated
(
Figure 16
). The new READ command should be issued x cycles after the first READ command, where x equals the number
of desired data elements.
FIGURE 15
Consecutive READ Bursts
%D $ &RO Q EDQN $ FROXPQ Q
'2 Q 'DWD 2XW IURP FROXPQ Q
%XUVW /H QJWK
VXEVHTXHQW HOHPHQWV RI 'DWD 2XW DUH SURYLGHG LQ WKH SURJUDPPHG RUGHU IROORZLQJ '2 Q
LQ WKH FDVH VKRZQ
'RQW &DUH
&/
W
5&'
W
53
W
5$6
W
5&
&RPPDQG
123
5($'
123
123
123
35(
123
$& 7
$& 7
123
123
&/.
$3 $X WR 3UHFKDUJH
'LV $3 'LVDEOH $X WR 3 HFKDUJH
$G GUHVV
$
$3
3UH %DQN $
3UH $ O
$3
'LV$3
'4
'2 Q
'2 Q
' 2 Q
' 2 Q
%D$
5RZE
%D$
5RZ[
&ROQ
%D $ &RO Q E %DQN $ &ROXPQ Q E
'2 Q E 'DWD 2XW IURP FROXPQ Q E
%XUVW /H QJWK
LQ WKH FDVH VKRZQ
VXEVHTXHQW HOHPHQWV RI 'DWD 2XW DUH SURYLGHG LQ WKH SURJUDPPHG RUGHU IROORZLQJ '2 Q E
'RQW &DUH
&/.
&/
&/
&RPPDQG
123
5($'
123
123
123
123
123
5($'
123
$G GUHVV
&RO E
&RO Q
'4
'2 Q
'2 Q
' 2 Q
' 2 Q
'2 E
'2 E
'2 E
'4
'2 Q
'2 Q
' 2 Q
' 2 Q
' 2 E
'2 E
相關PDF資料
PDF描述
HYMP112S64LMP8-C4 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-C5 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-E3 BNC FEMALE TO RCA MALE COUPLER
HYMP112S64LMP8-E4 DDR2 SDRAM SO-DIMM
HYMP112S64MP8 SHIELDED, RJ45 TO DB25 ADP, P
相關代理商/技術參數(shù)
參數(shù)描述
HYB18L256160BC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L256160BC-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
HYB18L256160BCL-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256160BCX-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256160BF 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*