參數(shù)資料
型號: HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對移動應用256兆移動RAM
文件頁數(shù): 19/58頁
文件大?。?/td> 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
19
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.5
READ
Subsequent to programming the mode register with CAS
latency and burst length, READ bursts are initiated with a
READ command, as shown in
Figure 11
. Basic timings for
the DQs are shown in
Figure 12
; they apply to all read
operations and therefore are omitted from all subsequent
timing diagrams.
The starting column and bank addresses are provided with
the READ command and Auto Precharge is either enabled or
disabled for that burst access. If Auto Precharge is enabled,
the row being accessed starts precharge at the completion of
the burst, provided
t
RAS
has been satisfied. For the generic
READ commands used in the following illustrations, Auto
Precharge is disabled.
FIGURE 11
READ Command
FIGURE 12
Basic READ Timing Parameters for DQs
%$ %$
%$
:(
&.(
+LJK
&/.
5$6
&$6
$ $
&$
'RQW &DUH
%$ %DQN $G GUHVV
&$ &ROXPQ $G GUHVV
$3 $X WR 3UHFKDUJH
$
$3
'LVDEOH $3
(QDEOH $3
&6
W
/=
W
$&
W
$&
W
+=
&/.
'RQW &DUH
W
'4=
W
2+
W
2+
'40
'4
'2 Q
'2 Q
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