參數(shù)資料
型號: HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對移動應(yīng)用256兆移動RAM
文件頁數(shù): 41/58頁
文件大?。?/td> 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
41
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
FIGURE 42
Auto Refresh
2.4.9.2
SELF REFRESH
The SELF REFRESH command can be used to retain data in
the Mobile-RAM, even if the rest of the system is powered
down. When in the self refresh mode, the Mobile-RAM retains
data without external clocking. The SELF REFRESH
command is initiated like an AUTO REFRESH command
except CKE is LOW. Input signals except CKE are “Don’t
Care” during SELF REFRESH.
The procedure for exiting SELF REFRESH requires a stable
clock prior to CKE returning HIGH. Once CKE is HIGH, NOP
commands must be issued for
t
RC
because time is required
for a completion of any internal refresh in progress.
If during normal operation burst auto refresh or user
controlled refresh is used, add
8192
auto refresh cycles
just before self refresh entry and just after self refresh
exit.
FIGURE 43
SELF REFRESH Entry Command
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$ $
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