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參數(shù)資料
| 型號： | HYB18L256160B |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| 中文描述： | DRAM的針對移動應(yīng)用256兆移動RAM |
| 文件頁數(shù)： | 40/58頁 |
| 文件大小： | 1766K |
| 代理商： | HYB18L256160B |
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Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
40
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
FIGURE 40
WRITE with Auto Precharge Interrupted by WRITE
2.4.9
AUTO REFRESH and SELF REFRESH
The Mobile-RAM requires a refresh of all rows in a rolling interval. Each refresh is generated in one of two ways: by an explicit
AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode.
2.4.9.1
AUTO REFRESH
AUTO REFRESH is used during normal operation of the
Mobile-RAM. The command is non persistent, so it must be
issued each time a refresh is required. A minimum row cycle
time (
t
RC
) is required between two AUTO REFRESH
commands. The same rule applies to any access command
after the AUTO REFRESH operation. All banks must be
precharged prior to the AUTO REFRESH command.
The refresh addressing is generated by the internal refresh
controller. This makes the address bits “Don’t Care” during an
AUTO REFRESH command. The Mobile-RAM requires
AUTO REFRESH cycles at an average periodic interval of 7.8
μ
s (max.). Partial array mode has no influence on AUTO
REFRESH mode.
FIGURE 41
AUTO REFRESH Command
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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