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參數(shù)資料
| 型號： | HYB18L256160B |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| 中文描述： | DRAM的針對移動應(yīng)用256兆移動RAM |
| 文件頁數(shù)： | 35/58頁 |
| 文件大小： | 1766K |
| 代理商： | HYB18L256160B |
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Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
35
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.6.4
WRITE to READ
A WRITE burst may be followed by, or truncated with a READ command. The READ command can be performed to the same
or a different (active) bank. With the registration of the READ command, data inputs will be ignored and no WRITE will be
performed, as shown in
Figure 33
.
FIGURE 33
WRITE to READ Timing
2.4.6.5
WRITE to PRECHARGE
A WRITE burst may be followed by, or truncated with a PRECHARGE command to the same bank, provided that Auto
Precharge was not activated. This is shown in
Figure 34
.
The PRECHARGE command should be issued
t
WR
after the clock edge at which the last desired data element of the WRITE
burst was registered. Additionally, when truncating a WRITE burst, DQM must be pulled to mask input data presented during
t
WR
prior to the PRECHARGE command. Following the PRE-CHARGE command, a subsequent ACTIVE command to the
same bank cannot be issued until
t
RP
is met.
In the case of a WRITE being executed to completion, a PRECHARGE command issued at the optimum time (as described
above) provides the same operation that would result from the same WRITE burst with Auto Precharge enabled. The
disadvantage of the PRECHARGE command is that it requires that the command and address busses be available at the
appropriate time to issue the command. The advantage of the PRECHARGE command is that it can be used to truncate bursts.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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