參數(shù)資料
型號: HB52R168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
中文描述: 128 MB的無緩沖內(nèi)存的SODIMM(128 MB的未緩沖同步內(nèi)存的SODIMM)
文件頁數(shù): 37/57頁
文件大?。?/td> 860K
代理商: HB52R168DB
HB52R168DB-F
37
Read command to Precharge command interval (same bank):
When the precharge command is executed
for the same bank as the read command that preceded it, the minimum interval between the two commands is
one clock. However, since the output buffer then becomes High-Z after the clocks defined by I
HZP
, there is a
case of interruption to burst read data output will be interrupted, if the precharge command is input during
burst read. To read all data by burst read, the clocks defined by I
EP
must be assured as an interval from the
final data output to precharge command execution.
READ to PRECHARGE Command Interval (same bank):
To output all data
CE
Latency = 2, Burst Length = 4
CK
Command
Dout
READ
PRE/PALL
out A0
out A1
out A2
out A3
CL=2
l = -1 cycle
CE
Latency = 3, Burst Length = 4
CK
Command
Dout
READ
PRE/PALL
out A0
out A1
out A2
out A3
CL=3
l = -2 cycle
相關(guān)PDF資料
PDF描述
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HB52R329E22 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
HB52R329E2 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
HB52RD168DB 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM)
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