參數(shù)資料
型號(hào)： HB52R168DB
廠商： Hitachi,Ltd.
英文描述： 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
中文描述： 128 MB的無(wú)緩沖內(nèi)存的SODIMM（128 MB的未緩沖同步內(nèi)存的SODIMM）
文件頁(yè)數(shù)： 22/57頁(yè)
文件大?。?/td> 860K
代理商： HB52R168DB
HB52R168DB-F
22
From PRECHARGE state, command operation
To [DESL], [NOR] or [BST]:
When these commands are executed, the SDRAM module enters the IDLE
state after t
RP
has elapsed from the completion of precharge.
From IDLE state, command operation
To [DESL], [NOP], [BST], [PRE] or [PALL]:
These commands result in no operation.
To [ACTV]:
The bank specified by the address pins and the ROW address is activated.
To [REF], [SELF]:
The SDRAM module enters refresh mode (auto refresh or self refresh).
To [MRS]:
The SDRAM module enters the mode register set cycle.
From ROW ACTIVE state, command operation
To [DESL], [NOP] or [BST]:
These commands result in no operation.
To [READ], [READ A]:
A read operation starts. (However, an interval of t
RCD
is required.)
To [WRIT], [WRIT A]:
A write operation starts. (However, an interval of t
RCD
is required.)
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.)
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands set the SDRAM module to precharge mode. (However, an interval of
t
RAS
is required.)
From READ state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
Data output by the previous read command continues to be output. A f t e r
CE
latency, the data output resulting from the next command will start.
To [WRIT], [WRIT A]:
These commands stop a burst read, and start a write cycle.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.)
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands stop a burst read, and the SDRAM module enters precharge mode.
相關(guān)PDF資料
PDF描述
HB52R2569E2 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM)
HB52R329E22 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
HB52R329E2 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
HB52RD168DB 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM)
HB52RD328DC 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52R168DB-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52R168DB-10F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52R168DB-10FL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52R168DB-10L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52R329E22-A6F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
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