參數(shù)資料
型號: HB52R168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
中文描述: 128 MB的無緩沖內(nèi)存的SODIMM(128 MB的未緩沖同步內(nèi)存的SODIMM)
文件頁數(shù): 33/57頁
文件大?。?/td> 860K
代理商: HB52R168DB
HB52R168DB-F
33
Command Intervals
Read command to Read command interval:
1.
Same bank, same ROW address
: When another read command is executed at the same ROW address of
the same bank as the preceding read command execution, the second read can be performed after an interval
of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by
the second command will be valid.
READ to READ Command Interval
(same ROW address in same bank)
CK
Command
Dout
out B3
Address
out B1 out B2
BA
ACTV
Row
Column A
READ
READ
Column B
out A0 out B0
Bank0
Active
Column =A
Read
Column =B
Read
Column =A
Dout
Column =B
Dout
CE
Latency = 3
Burst Length = 4
Bank 0
2. Same bank, different ROW address:
When the ROW address changes on same bank, consecutive read
commands cannot be executed; it is necessary to separate the two read commands with a precharge command
and a bank-active command.
3. Different bank:
When the bank changes, the second read can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. Even when the first command is a burst
read that is not yet finished, the data read by the second command will be valid.
READ to READ Command Interval
(different bank)
CK
Command
Dout
out B3
Address
out B1 out B2
BA
ACTV
Row 0
Row 1
ACTV
READ
Column A
out A0 out B0
Bank0
Active
Bank3
Active
Bank0
Read
Bank3
Read
READ
Column B
Bank0
Dout
Bank3
Dout
CE
Latency = 3
Burst Length = 4
相關(guān)PDF資料
PDF描述
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HB52R329E22 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
HB52R329E2 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
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HB52RD328DC 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM)
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