參數(shù)資料
型號: HB52R2569E2
廠商: Hitachi,Ltd.
英文描述: 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM)
中文描述: 2 GB的注冊SDRAM的內(nèi)存(2GB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 1/23頁
文件大?。?/td> 207K
代理商: HB52R2569E2
Preliminary: The Specifications of this device are subject to change without notice. Please contact to your
nearest Hitachi’s sales Dept. regarding specifications.
HB52R2569E2-A6B/B6B
2 GB Registered SDRAM DIMM
256-Mword
×
72-bit, 100 MHz Memory Bus, 2-Bank Module
(72 pcs of 128 M
×
2 Components)
PC100 SDRAM
ADE-203-1091 (Z)
Preliminary
Rev. 0.0
Jul. 23, 1999
Description
The HB52R2569E2 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
as an optimized main memory solution for 8-byte processor applications. The HB52R2569E2 is a 128M
×
72
×
2-bank Synchronous Dynamic RAM Module, mounted 72 pieces of 256-Mbit SDRAM (HM5225205BTB)
sealed in TCP package, 1 piece of PLL clock driver, 3 pieces register driver and 1 piece of serial EEPROM
(2-kbit) for Presence Detect (PD). An outline of the HB52R2569E2 is 168-pin socket type package (dual lead
out). Therefore, the HB52R2569E2 makes high density mounting possible without surface mount
technology. The HB52R2569E2 provides common data inputs and outputs. Decoupling capacitors are
mounted beside TCP on the module board.
Note:
Do not push the cover or drop the modules in order to protect from mechanical defects, which would
be electrical defects.
Features
168-pin socket type package (dual lead out)
Outline: 133.37 mm (length)
×
53.34 mm (Height)
×
4.80 mm (Thickness)
Lead pitch: 1.27 mm
3.3 V power supply
Clock frequency: 100 MHz (max)
LVTTL interface
Data bus width:
×
72 ECC
Single pulsed
RAS
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