參數(shù)資料
型號(hào): HB52R168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
中文描述: 128 MB的無(wú)緩沖內(nèi)存的SODIMM(128 MB的未緩沖同步內(nèi)存的SODIMM)
文件頁(yè)數(shù): 30/57頁(yè)
文件大?。?/td> 860K
代理商: HB52R168DB
HB52R168DB-F
30
Write with auto-precharge:
In this operation, since precharge is automatically performed after completing
a burst write or single write operation, a precharge command need not be executed after each write operation.
The command executed for the same bank after the execution of this command must be the bank active
(ACTV) command. In addition, an interval of l
APW
is required between the final valid data input and input of
next command.
Burst Write
(Burst Length = 4)
CK
Command
Din
l
APW
I
RAS
ACTV
WRIT A
in0
in1
in2
in3
ACTV
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command
and internal precharge " ".
Single Write
CK
Command
Din
l
APW
I
RAS
ACTV
WRIT A
in
ACTV
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command
and internal precharge " ".
相關(guān)PDF資料
PDF描述
HB52R2569E2 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM)
HB52R329E22 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
HB52R329E2 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
HB52RD168DB 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM)
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