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參數(shù)資料
| 型號： | HB52R168DB |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM) |
| 中文描述： | 128 MB的無緩沖內(nèi)存的SODIMM（128 MB的未緩沖同步內(nèi)存的SODIMM） |
| 文件頁數(shù)： | 27/57頁 |
| 文件大?。?/td> | 860K |
| 代理商： | HB52R168DB |
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HB52R168DB-F
27
Operation of the SDRAM module
Read/Write Operations
Bank active:
Before executing a read or write operation, the corresponding bank and the row address must
be activated by the bank active (ACTV) command. Bank0, bank1, bank2 or bank3 is activated according to
the status of the bank select address pin, and the row address (AX0 to AX11) is activated by the A0 to A11
pins at the bank active command cycle. An interval of t
RCD
is required between the bank active command
input and the following read/write command input.
Read operation:
A read operation starts when a read command is input. Output buffer becomes Low-Z in
the (
CE
Latency-1) cycle after read command set. The SDRAM module can perform a burst read operation.
The burst length can be set to 1, 2, 4, 8 or full-page. The start address for a burst read is specified by the
column address and the bank select address (BA) at the read command set cycle. In a read operation, data
output starts after the number of clocks specified by the
CE
Latency. The
CE
Latency can be set to 2 or 3.
When the burst length is 1, 2, 4, or 8, full-page, the Dout buffer automatically becomes High-Z at the next
clock after the successive burst-length data has been output. The
CE
latency and burst length must be
specified at the mode register.
CE
Latency
READ
CK
Command
Dout
ACTV
Row
Column
Address
CL = 2
CL = 3
out 0
out 1
out 2
out 3
out 0
out 1
out 2
out 3
t
RCD
CL =
CE
latency
Burst Length = 4
相關PDF資料 |
PDF描述 |
|---|---|
| HB52R2569E2 | 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) |
| HB52R329E22 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52R329E2 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52RD168DB | 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM) |
| HB52RD328DC | 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R168DB-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R329E22-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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