- 您現(xiàn)在的位置：買賣IC網 > PDF目錄370430 > HB52R168DB (Hitachi,Ltd.) 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM) PDF資料下載
參數(shù)資料
| 型號： | HB52R168DB |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM) |
| 中文描述： | 128 MB的無緩沖內存的SODIMM（128 MB的未緩沖同步內存的SODIMM） |
| 文件頁數(shù)： | 36/57頁 |
| 文件大?。?/td> | 860K |
| 代理商： | HB52R168DB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁當前第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁
HB52R168DB-F
36
Write command to Read command interval:
1. Same bank, same ROW address:
When the read command is executed at the same ROW address of the
same bank as the preceding write command, the read command can be performed after an interval of no less
than 1 clock. However, in the case of a burst write, data will continue to be written until one cycle before the
read command is executed.
WRITE to READ Command Interval (1)
CK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CE
Latency
DQMB
Burst Write Mode
CE
Latency = 2
Burst Length = 4
Bank 0
WRITE to READ Command Interval (2)
CK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CE
Latency
in A1
DQMB
Burst Write Mode
CE
Latency = 2
Burst Length = 4
Bank 0
2. Same bank, different ROW address:
When the ROW address changes, consecutive read commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the read command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write,
data will continue to be written until one clock before the read command is executed (as in the case of the
same bank and the same address).
相關PDF資料 |
PDF描述 |
|---|---|
| HB52R2569E2 | 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) |
| HB52R329E22 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52R329E2 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52RD168DB | 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM) |
| HB52RD328DC | 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R168DB-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R329E22-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。