參數(shù)資料
型號(hào): HB52R168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
中文描述: 128 MB的無緩沖內(nèi)存的SODIMM(128 MB的未緩沖同步內(nèi)存的SODIMM)
文件頁數(shù): 1/57頁
文件大?。?/td> 860K
代理商: HB52R168DB
HB52R168DB-F
128 MB Unbuffered SDRAM S.O.DIMM
16-Mword
×
64-bit, 66 MHz Memory Bus, 1-Bank Module
(16 pcs of 16 M
×
4 components)
ADE-203-1098A (Z)
Rev. 1.0
Jan. 24, 2000
Description
The HB52R168DB is a 16M
×
64
×
1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory
Module (S.O.DIMM), mounted 16 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP package and
1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52R168DB is 144-pin Zig
Zag Dual tabs socket type compact and thin package. Therefore, the HB52R168DB makes high density
mounting possible without surface mount technology. The HB52R168DB provides common data inputs and
outputs. Decoupling capacitors are mounted beside TCP on the module board.
Note:
Do not push the cover or drop the modules in order to protect from mechanical defects, which would
be electrical defects.
Features
Fully compatible with JEDEC standard outline 8-byte S.O.DIMM
144-pin Zig Zag Dual tabs socket type
Outline: 67.60 mm (Length)
×
25.40 mm (Height)
×
3.80 mm (Thickness)
Lead pitch: 0.80 mm
3.3 V power supply
Clock frequency: 66 MHz
LVTTL interface
Data bus width:
×
64 Non parity
Single pulsed
RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length : 1/2/4/8/full page
相關(guān)PDF資料
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