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參數資料
| 型號： | HB52R168DB |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM) |
| 中文描述： | 128 MB的無緩沖內存的SODIMM（128 MB的未緩沖同步內存的SODIMM） |
| 文件頁數： | 18/57頁 |
| 文件大小： | 860K |
| 代理商： | HB52R168DB |
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HB52R168DB-F
18
CKE Truth Table
CKE
Current state
Command
n-1
n
S
RE
CE
W
Address
Active
Clock suspend mode entry
H
L
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
Any
Clock suspend
L
L
Clock suspend
Clock suspend mode exit
L
H
Idle
Auto refresh command REF
H
H
L
L
L
H
Idle
Self refresh entry SELF
H
L
L
L
L
H
Idle
Power down entry
H
L
L
H
H
H
H
L
H
×
×
×
Self-refresh
Self refresh exit SELFX
L
H
L
H
H
H
L
H
H
×
×
×
Power down
Power down exit
L
H
L
H
H
H
L
H
H
×
×
×
Note:
H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
Clock suspend mode entry:
The SDRAM module enters clock suspend mode from active mode by setting
CKE to Low. If command is input in the clock suspend mode entry cycle, the command is valid. The clock
suspend mode changes depending on the current status (1 clock before) as shown below.
ACTIVE clock suspend:
This suspend mode ignores inputs after the next clock by internally maintaining
the bank active status.
READ suspend and READ with Auto-precharge suspend:
The data being output is held (and continues to
be output).
WRITE suspend and WRIT with Auto-precharge suspend:
In this mode, external signals are not
accepted. However, the internal state is held.
Clock suspend:
During clock suspend mode, keep the CKE to Low.
Clock suspend mode exit:
The SDRAM module exits from clock suspend mode by setting CKE to High
during the clock suspend state.
IDLE:
In this state, all banks are not selected, and completed precharge operation.
Auto refresh command [REF]:
When this command is input from the IDLE state, the SDRAM module
starts auto refresh operation. (The auto refresh is the same as the CBR refresh of conventional DRAM
module.) During the auto refresh operation, refresh address and bank select address are generated inside the
SDRAM module. For every auto refresh cycle, the internal address counter is updated. Accordingly, 4096
times are required to refresh the entire memory. Before executing the auto refresh command, all the banks
must be in the IDLE state. In addition, since the precharge for all banks is automatically performed after auto
refresh, no precharge command is required after auto refresh.
相關PDF資料 |
PDF描述 |
|---|---|
| HB52R2569E2 | 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) |
| HB52R329E22 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52R329E2 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52RD168DB | 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM) |
| HB52RD328DC | 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HB52R168DB-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R168DB-10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52R329E22-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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