參數(shù)資料
型號(hào): HB52R168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
中文描述: 128 MB的無(wú)緩沖內(nèi)存的SODIMM(128 MB的未緩沖同步內(nèi)存的SODIMM)
文件頁(yè)數(shù): 25/57頁(yè)
文件大?。?/td> 860K
代理商: HB52R168DB
HB52R168DB-F
25
Mode Register Configuration
The mode register is set by the input to the address pins (A0 to A13) during mode register set cycles. The
mode register consists of five sections, each of which is assigned to address pins.
A13, A12, A11, A10, A9, A8: (OPCODE):
The SDRAM module has two types of write modes. One is the
burst write mode, and the other is the single write mode. These bits specify write mode.
Burst read and burst write:
Burst write is performed for the specified burst length starting from the column
address specified in the write cycle.
Burst read and single write:
Data is only written to the column address specified during the write cycle,
regardless of the burst length.
A7:
Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set.
A6, A5, A4: (LMODE):
These pins specify the
CE
latency.
A3: (BT):
A burst type is specified. When full-page burst is performed, only “sequential” can be selected.
A2, A1, A0: (BL):
These pins specify the burst length.
A2 A1
A0
Burst Length
BT=0
0
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
1
2
4
8
R
R
1
1
1
F.P.
BT=1
1
1
0
R
1
2
4
8
R
R
R
R
A3
0 Sequential
1
Interleave
Burst Type
A6
0
0
0
0
1
A5
0
0
1
1
X
A4 CAS Latency
0
1
0
1
X
R
R
2
3
R
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
OPCODE
0
LMODE
BT
BL
A9
0
0
1
1
R
Write mode
Burst read and burst write
A8
0
1
0
1
Burst read and single write
R
F.P. = Full Page
R is Reserved (inhibit)
X: 0 or 1
A11
A10
A10
X
X
X
A11
0
X
X
X
0
A12
A13
A13
0
X
X
X
A12
0
X
X
X
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