參數(shù)資料
型號(hào): S568013MFA00E
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 數(shù)字信號(hào)處理
英文描述: 0-BIT, 8 MHz, OTHER DSP, PQFP32
封裝: ROHS COMPLIANT, LQFP-32
文件頁(yè)數(shù): 121/125頁(yè)
文件大?。?/td> 1702K
代理商: S568013MFA00E
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General Characteristics
56F8013/56F8011 Data Sheet, Rev. 11
Freescale Semiconductor
95
10.1.1
ElectroStatic Discharge (ESD) Model
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
3. Per JEDEC JESC51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the
top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method
1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per
JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT.
7. See Section 12.1 for more details on thermal design considerations.
Table 10-2 56F8013/56F8011 ESD Protection
Characteristic
Min
Typ
Max
Unit
ESD for Human Body Model (HBM)
2000
V
ESD for Machine Model (MM)
200
V
ESD for Charge Device Model (CDM)
750
V
Table 10-3 LQFP Package Thermal Characteristics6
Characteristic
Comments
Symbol
Value
(LQFP)
Unit
Notes
Junction to ambient
Natural convection
Single layer board
(1s)
RθJA
74
°C/W
1,2
Junction to ambient
Natural convection
Four layer board
(2s2p)
RθJMA
50
°C/W
1,3
Junction to ambient
(@200 ft/min)
Single layer board
(1s)
RθJMA
67
°C/W
1,3
Junction to ambient
(@200 ft/min)
Four layer board
(2s2p)
RθJMA
46
°C/W
1,3
Junction to board
RθJB
23
°C/W
4
Junction to case
RθJC
20
°C/W
5
Junction to package top
Natural Convection
Ψ
JT
4°C/W
6
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