參數(shù)資料
型號(hào)： ORT4622
英文描述： Field-Programmable System Chip (FPSC) Four-Channel x 622 Mbits/s Backplane Transceiver
中文描述： 現(xiàn)場(chǎng)可編程系統(tǒng)芯片（促進(jìn)文化基金）四通道x 622 Mbits /秒背板收發(fā)器
文件頁(yè)數(shù)： 40/90頁(yè)
文件大?。?/td> 1915K
代理商： ORT4622
ORCAORT4622 FPSC
Four-Channel x 622 Mbits/s Backplane Transceiver
Preliminary Data Sheet
March 2000
40
L Lucent Technologies Inc.
Electrical Characteristics
Table 15. General Electrical Characteristics
ORT4622 Commercial: V
DD
= 3.3 V
±
5%, V
DD
2 = 2.5 V
±
5%, 0 °C < T
A
< 70 °C
.
Table 16. Electrical Characteristics for FPGA I/O
ORT4622 Commercial: V
DD
= 3.3 V
±
5%, V
DD
2 = 2.5 V
±
5%, 0 °C < T
A
< 70 °C
.
* The pull-up resistor will externally pull the pin to a level 1.0 V below V
DD
.
Symbol
Parameter
Test Conditions
ORT4622
Min
—
Unit
Max
5.3
I
DDSB
Standby Current
(T
A
= 25 °C, V
DD
= 3.3 V, V
DD
2 = 2.5 V)
internal oscillator
running, no output loads, inputs at V
DD
or GND
(after configuration)
(T
A
= 25 °C, V
DD
= 3.3 V, V
DD
2 = 2.5 V) internal oscillator
stopped, no output loads, inputs at V
DD
or GND
(after configuration)
T
A
= 25 °C
Power supply current at approximately 1 V, within a rec-
ommended power supply ramp rate of 1 ms—200 ms
mA
I
DDSB
Standby Current
—
1.4
mA
V
DR
I
PP
Data Retention Voltage
Powerup Current
2.3
2.7
—
—
V
mA
Parameter
Symbol
Test Conditions
ORT4622
Min
Unit
Max
Input Voltage:
High
Low
Input Voltage:
High
Low
Output Voltage:
High
Low
Input Leakage Current
Input Capacitance
V
IH
V
IL
Input configured as CMOS
(clamped to V
DD
)
50% V
DD
GND – 0.5
V
DD
+ 0.3
30% V
DD
V
V
V
IH
V
IL
Input configured as 5 V tolerant
50% V
DD
GND – 0.5
5.8
30% V
DD
V
V
V
OH
V
OL
I
L
C
IN
V
DD
= min, I
OH
= 6 mA or 3 mA
V
DD
= min, I
OL
= 12 mA or 6 mA
V
DD
= max, V
IN
= V
SS
or V
DD
(T
A
= 25 °C, V
DD
= 3.3 V, V
DD
2 = 2.5 V)
test frequency = 1 MHz
(T
A
= 25 °C, V
DD
= 3.3 V, V
DD
2 = 2.5 V)
test frequency = 1 MHz
—
—
(V
DD
= 3.6 V,
V
IN
= V
SS
,
T
A
= 0 °C)
(V
DD
= 3.6 V,
V
IN
= V
SS,
T
A
= 0 °C)
V
DD
= all, V
IN
= V
SS
, T
A
= 0 °C
V
DD
= all, V
IN
= V
DD
, T
A
= 0 °C
2.4
—
–10
—
—
0.4
10
8
V
V
μA
pF
Output Capacitance
C
OUT
—
9
pF
DONE Pull-up Resistor*
M[3:0] Pull-up Resistors*
I/O Pad Static Pull-up
Current*
I/O Pad Static Pull-down
Current
I/O Pad Pull-up Resistor*
I/O Pad Pull-down Resistor
R
DONE
R
M
I
PU
100
100
14.4
—
—
50.9
k
k
μA
I
PD
26
103
μA
R
PU
R
PD
100
50
—
—
k
k
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