型號(hào) 廠商 描述
m393t6450fza-d5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC
m393t6453fg3-cc
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC
m39832-t12wne1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 TRANSZORB, 600W, VR: 25.6V UNIPOLAR, VBR: 28.5V - 31.5V
m39832-t15wne1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
m39832-b12wne1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 TVS UNI-DIR 30V 600W DO-15
m39832-b15wne1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 TVS BI-DIR 30V 600W DO-15
m39832-t12wne6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 TVS UNI-DIR 33V 600W DO-15
m39832-t15wne6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 TVS BI-DIR 33V 600W DO-15
m39832-b12wne6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 RECTIFIER, BRIDGE, 600V, 6A, PB-6
m39832-b15wne6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
意法半導(dǎo)體 TVS UNI-DIR 51V 600W DO-15
m42sp-7
2
MITSUMI ELECTRIC Stepping Motors
m4565
2 3 4
友順科技股份有限公司 LINEAR INTEGRATED CIRCUIT
m464s0924ct1-l1l
2 3 4 5 6 7 8 9
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924dts-l1h
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924ets-c7a
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 64MB, 128MB Unbuffered SODIMM
m464s0924ets-cl7a
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 64MB, 128MB Unbuffered SODIMM
m464s0924dts-l1l
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924dts-l7a
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924dts-l7c
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924ets
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 64MB, 128MB Unbuffered SODIMM
m464s0924fts
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC
m464s0924fts-c(l)7a
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC
m464s0924dts
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924dts-c1h
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924dts-c1l
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924dts-c7a
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s0924dts-c7c
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
m464s1654bt1
2 3 4 5
SAMSUNG SEMICONDUCTOR CO. LTD. 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
m464s1654ets-c7a
2 3 4 5
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s1654ets
2 3 4 5
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s1724fts-c(l)7a
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC
m464s3323bn0
2 3 4 5 6 7 8 9
SAMSUNG SEMICONDUCTOR CO. LTD. 144pin SDRAM SODIMM
m464s6554bts-l7a
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s3354bts-c7a
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s3354bts-cl7a
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s3354bts
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s3354bts-c
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s3354bts-l7a
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s6554bts
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s6554bts-c7a
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s6554bts-cl7a
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s6554bts-l
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m464s6754bts
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SAMSUNG SEMICONDUCTOR CO. LTD. SDRAM Unbuffered SODIMM
m466f0804dt1-l
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
m470l3224fu0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. ; Impedance:129ohm; Cable Width:0.72"; External Width:1.125"; Length:1.25"; External Depth:1.155"; Cable Diameter Max:0.78"; External Height:1.55"; Width (Latch Included):1.23"
m485l1624fu0-cb0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. DDR SDRAM SODIMM
m485l1624fu0-cb3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. DDR SDRAM SODIMM
m470l3224ft0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. DDR SDRAM SODIMM
m470l3224ft0-ca2
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. DDR SDRAM SODIMM
m470l3224ft0-cb0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. DDR SDRAM SODIMM