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參數(shù)資料
| 型號： | M464S1654BT1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 16Mx64 SDRAM內存的SODIMM在16Mx16顯示，4Banks，8K的刷新，3.3V的同步DRAM的社民黨 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 75K |
| 代理商： | M464S1654BT1 |
Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
FEATURES
á
High breakdown voltage (BV
CEO
≥
50V)
á
High-current driving (Io(max) = –500mA)
á
With output clamping diodes
á
Driving available with CMOS IC output of 6-16V or with TTL output
á
Wide operating temperature range (Ta = –20 to +75
°
C)
á
Output current-sourcing type
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M63800FP has seven circuits, which are made of input
inverters and current-sourcing outputs. The outputs are
made of PNP transistors and NPN Darlington transistors.
The PNP transistor base current is constant. A spike-killer
clamping diode is provided between each output pin and
GND. V
S
(pin 8) and GND (pin 9) are used commonly among
the eight circuits.
The input has resistance of 3k
, and a maximum of 10V can
be applied. The output current is 500mA maximum. Supply
voltage V
S
is 50V maximum.
The M63800FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
–0.5 ~ +50
50
–0.5 ~ +10
–500
–500
50
1.00
–20 ~ +75
–55 ~ +125
# : Unused I/O pins must be connected to GND.
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
V
CEO
V
S
V
I
I
O
I
F
V
R #
P
d
T
opr
T
stg
#
Ratings
Symbol
Parameter
Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25
°
C, when mounted on board
1.5K
7.2K
3K
3K
20K
V
S
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the V
S
and GND.
1
IN1
→
IN2
→
IN3
→
IN4
→
IN5
→
IN6
→
IN7
→
GND
V
S
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→
O7
→
O6
→
O5
→
O4
→
O3
→
O2
→
O1
INPUT
OUTPUT
Package type 16P2N-A
V
V
V
mA
mA
V
W
°
C
°
C
Unit
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M464S1654BT1-C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654ETS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Unbuffered SODIMM |
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