參數(shù)資料
型號(hào): M464S3354BTS
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: SDRAM Unbuffered SODIMM
中文描述: 內(nèi)存緩沖的SODIMM
文件頁(yè)數(shù): 9/15頁(yè)
文件大?。?/td> 277K
代理商: M464S3354BTS
256MB, 512MB Unbuffered SODIMM
Rev. 1.2 March 2004
SDRAM
DC CHARACTERISTICS
M464S3354BTS (32M x 64, 256MB Module)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
7A
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
400
mA
1
Precharge standby current
in power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
8
mA
I
CC2
PS
CKE & CLK
V
IL
(max), t
CC
=
8
Precharge standby current
in non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
80
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
40
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
25
mA
I
CC3
PS
CKE & CLK
V
IL
(max), t
CC
=
25
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
120
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
100
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
520
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
800
mA
2
Self refresh current
I
CC6
CKE
0.2V
C
12
mA
L
6
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
Notes :
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