- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383299 > M464S0924DTS-L1H (SAMSUNG SEMICONDUCTOR CO. LTD.) 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD PDF資料下載
參數(shù)資料
| 型號： | M464S0924DTS-L1H |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 8Mx64 SDRAM內(nèi)存的SODIMM在8M × 16位，4Banks，4K的刷新，3.3V的同步DRAM的社民黨 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 85K |
| 代理商： | M464S0924DTS-L1H |
M464S0924DTS
PC133/PC100 SODIMM
Rev. 0.1 Sept. 2001
The Samsung M464S0924DTS is a 8M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M464S0924DTS consists of four CMOS 8M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and
a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-
epoxy substrate. Three 0.1uF decoupling capacitors are
mounted on the printed circuit board in parallel for each
SDRAM. The M464S0924DTS is a Small Outline Dual In-line
Memory Module and is intended for mounting into 144-pin
edge connector sockets.
Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable laten-
cies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
Performance range
Burst mode operation
Auto & self refresh capability (4096 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Serial presence detect with EEPROM
PCB :
Height (1,000mil)
, double sided component
Part No.
Max Freq. (Speed)
133MHz (7.5ns @ CL=2)
133MHz (7.5ns @ CL=3)
100MHz (10ns @ CL=2)
100MHz (10ns @ CL=3)
M464S0924DTS-L7C/C7C
M464S0924DTS-L7A/C7A
M464S0924DTS-L1H/C1H
M464S0924DTS-L1L/C1L
FEATURE
GENERAL DESCRIPTION
M464S0924DTS SDRAM SODIMM
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
PIN NAMES
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
Pin Name
Function
A0 ~ A11
Address input (Multiplexed)
BA0 ~ BA1
Select bank
DQ0 ~ DQ63
Data input/output
CLK0
Clock input
CKE0
Clock enable input
CS0
Chip select input
RAS
Row address storbe
CAS
Column address strobe
WE
Write enable
DQM0 ~ 7
DQM
V
DD
Power supply (3.3V)
V
SS
Ground
SDA
Serial data I/O
SCL
Serial clock
Don
′
t use
No connection
DU
NC
PIN CONFIGURATIONS (Front side/back side)
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
V
SS
DQM0
DQM1
V
DD
A0
A1
A2
V
SS
DQ8
DQ9
DQ10
DQ11
V
DD
DQ12
DQ13
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
V
SS
DQM4
DQM5
V
DD
A3
A4
A5
V
SS
DQ40
DQ41
DQ42
DQ43
V
DD
DQ44
DQ45
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
DQ14
DQ15
V
SS
NC
NC
CLK0
V
DD
RAS
WE
CS0
*CS1
DU
V
SS
NC
NC
V
DD
DQ16
DQ17
DQ18
DQ19
V
SS
DQ20
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
DQ46
DQ47
V
SS
NC
NC
CKE0
V
DD
CAS
*CKE1
*A12
*A13
*CLK1
V
SS
NC
NC
V
DD
DQ48
DQ49
DQ50
DQ51
V
SS
DQ52
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
DQ21
DQ22
DQ23
V
DD
A6
A8
V
SS
A9
A10/AP
V
DD
DQM2
DQM3
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
**SDA
V
DD
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
DQ53
DQ54
DQ55
V
DD
A7
BA0
V
SS
BA1
A11
V
DD
DQM6
DQM7
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
**SCL
V
DD
* SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Voltage Key
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M464S0924ETS-C7A | 64MB, 128MB Unbuffered SODIMM |
| M464S0924ETS-CL7A | 64MB, 128MB Unbuffered SODIMM |
| M464S0924DTS-L1L | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS-L7A | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS-L7C | 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M464S0924DTS-L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS-L7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924DTS-L7C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S0924ETS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64MB, 128MB Unbuffered SODIMM |
| M464S0924ETS-C7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64MB, 128MB Unbuffered SODIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。