參數(shù)資料
型號: V59C1G01808QBLF-19A
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: DDR DRAM, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁數(shù): 64/80頁
文件大小: 971K
代理商: V59C1G01808QBLF-19A
67
ProMOS TECHNOLOGIES
V59C1G01(408/808)QB
V59C1G01(408/808)QB Rev. 1.1 December 2008
Symbol
Parameter/Condition
-37
DDR2-533
-3
DDR2-667
-25A/25
DDR2-800
-19A
DDR2-1066
Unit
Notes
IDD0
Operating Current
80
90
100
110
mA
1,2
IDD1
Operating Current
95
105
115
125
mA
1,2
IDD2P
Precharge Power-Down
Current
15
mA
1,2
IDD2N
Precharge Standby
Current
40
45
50
60
mA
1,2
IDD2Q
Precharge Quiet
Standby Current
40
45
50
60
mA
1,2
IDD3P
Active Power Down
Standby Current
MRS(12)=0
18
mA
1,2
Active Power Down
Standby Current
MRS(12)=1
30
33
38
46
mA
1,2
IDD3N
Active Standby Current
68
72
75
85
mA
1,2
IDD4R
Operating Current
Burst Read
190
210
240
270
mA
1,2
IDD4W
Operating Current
Burst Write
200
220
250
270
mA
1,2
IDD5B
Burst Auto-Refresh
Current (tRFC=tRFCmin)
250
260
270
300
mA
1,2
IDD5D
Distributed Refresh
Current(tCK=tCKmin)
45
50
mA
1,2
IDD6
Self-Refresh Current for
Standard products
8
mA
1,2
IDD7
Operating Current
270
300
310
330
mA
1
(VDDQ=1.8V+/-0.1V; VDD=1.8V+/-0.1V)
DDR2-533/-667/-800/-1066
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