參數(shù)資料
型號: V59C1G01808QBLF-19A
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: DDR DRAM, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁數(shù): 27/80頁
文件大?。?/td> 971K
代理商: V59C1G01808QBLF-19A
33
ProMOS TECHNOLOGIES
V59C1G01(408/808)QB
V59C1G01(408/808)QB Rev. 1.1 December 2008
Write Data Mask
One write data mask input (DM) for x4 and x8 components is supported on DDR2 SDRAMS, consistent
with the implementation on DDR SDRAMs. It has identical timings on write operations as the data bits,
and though used in a uni-directional manner,is internally loaded identically to data bits to insure matched
system timing. Data mask is not used during read cycles. If DM is high during a write burst coincident
with the write data, the write data bit is not written to the memory. For x8 components the DM function
is disabled, when RDQS / RDQS are enabled by EMRS.
Write Data Mask Timing
DQS,
DQS
t DQSH
tDQSL
t WPRE
WPST
t
DQ
Din
tDS
DH
DM
don’t care
Din
t
.
Burst Write Operation with Data Mask : RL = 3 (AL = 0, CL = 3), WL = 2, tWR = 3 , BL = 4
NOP
WRITE A
T0
T2
T1
T3
T4
T5
T6
T7
Tn
WL = RL-1 = 2
DM
CMD
DQ
NOP
tWR
<= tDQSS
Precharge
Bank A
Activate
tRP
DQS,
DQS
DM
DIN A0
DIN A3
CK, CK
DIN A1 DIN A2
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