參數(shù)資料
型號(hào): PSD913F1V
英文描述: 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; A IRHNA57163SE with Standard Packaging
中文描述: Flash在系統(tǒng)可編程微控制器外設(shè)
文件頁(yè)數(shù): 85/94頁(yè)
文件大小: 463K
代理商: PSD913F1V
PSD913F1
Preliminary
84
Symbol
Parameter
1
Conditions Typical
2
Max
Unit
C
IN
C
OUT
C
VPP
Capacitance (for input pins only)
V
IN
= 0 V
V
OUT
= 0 V
V
PP
= 0 V
4
6
pF
Capacitance (for input/output pins)
8
12
pF
Capacitance (for CNTL2/V
PP
)
18
25
pF
NOTES:
1. These parameters are only sampled and are not 100% tested.
2. Typical values are for T
A
= 25
°
C and nominal supply voltages.
T
A
= 25 °C, f = 1 MHz
Pin Capacitance
Figure 35.
AC Testing
Input/Output
Waveform
Figure 36.
AC Testing
Load Circuit
Programming
3.0V
0V
TEST POINT
1.5V
DEVICE
UNDER TEST
2.01 V
195
C
L
= 30 pF
(INCLUDING
SCOPE AND JIG
CAPACITANCE)
Upon delivery from ST, the PSD913F1 device has all bits in the PLDs and memories in the
1
or high state. The configuration bits are in the
0
or low state. The code, configuration,
and PLDs logic are loaded through the procedure of programming.
Information for programming the device is available directly from ST. Please contact your
local sales representative. (See the last page.)
相關(guān)PDF資料
PDF描述
PSD913F2 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7260 with optional Total Dose Rating of 300kRads
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