參數(shù)資料
型號: PSD913F1V
英文描述: 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; A IRHNA57163SE with Standard Packaging
中文描述: Flash在系統(tǒng)可編程微控制器外設(shè)
文件頁數(shù): 73/94頁
文件大?。?/td> 463K
代理商: PSD913F1V
PSD913F1
Preliminary
72
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
t
NLNH
Warm RESET Active Low Time (Note 1)
150
ns
t
OPR
RESET High to Operational Device
120
ns
t
NLNH-PO
Power On Reset Active Low Time
(Note 2)
1
ms
Reset Timing
(5 V ± 10%)
NOTE:
1. t
CLCL
is the CLKIN clock period.
Microcontroller Interface – PSD913F1 AC/DC Parameters
(5V ±10% Versions)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
Vstby Detection to Vstbyon Output High
20
μs
t
BXBL
VstbyOff Detection to Vstbyon
Output Low
20
μs
V
stbyon
Timing
(5 V ± 10%)
-90
-12
-15
Symbol
Parameter
Conditions
Min
Max
Min
Max
Min
Max
Unit
t
LVDV
ALE Access Time from
Power Down
90
120
150
ns
Maximum Delay from
APD Enable to Internal
PDN Valid Signal
t
CLWH
Using CLKIN Input
15
*
t
CLCL
(Note 1)
μs
Power Down Timing
(5 V ± 10%)
NOTE:
1. RESET will not reset Flash or EEPROM programming/erase cycles.
2. tNLNH-PO is 10 ms for devices manufactured before rev. A.
相關(guān)PDF資料
PDF描述
PSD913F2 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7260 with optional Total Dose Rating of 300kRads
PSD913F2V 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA7260 with Standard Packaging
PSD913F2(中文) Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng))
PSD934F2(中文) Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng))
PSD913F2 Configurable Memory System on a Chip for 8-Bit Microcontrollers(用于8位MCU的可配置存儲器系統(tǒng))
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