參數(shù)資料
型號： PSD913F1V
英文描述： 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; A IRHNA57163SE with Standard Packaging
中文描述： Flash在系統(tǒng)可編程微控制器外設(shè)
文件頁數(shù)： 17/94頁
文件大?。?/td> 463K
代理商： PSD913F1V
PSD913F1
Preliminary
16
9.1.1.1 Memory Block Selects
The decode PLD in the PSD913F1 generates the chip selects for all the internal memory
blocks (refer to the PLD section). Each of the eight Flash memory sectors have a
Flash Select signal (FS0-FS7) which can contain up to three product terms. Each of the
four EEPROM memory sectors have a Select signal (EES0-3 or CSBOOT0-3) which can
contain up to three product terms. Having three product terms for each sector select signal
allows a given sector to be mapped in different areas of system memory. When using a
microcontroller with separate Program and Data space, these flexible select signals allow
dynamic re-mapping of sectors from one space to the other when used with the VM
registers (See Section 9.1.3.1).
9.1.1.2 The Ready/Busy Pin (PC3)
Pin PC3 can be used to output the Ready/Busy status of the PSD913F1. The output on
the pin will be a ‘0’ (Busy) when Flash or EEPROM memory blocks are being written to,
or
when the Flash memory block is being erased. The output will be a ‘1’ (Ready) when no
write or erase operation is in progress.
9.1.1.3 Memory Operation
The main Flash and EEPROM memory are addressed through the microcontroller interface
on the PSD913F1 device. The microcontroller can access these memories in one of two
ways:
J
The microcontroller can execute a typical bus write or read
operation
just as it would
if accessing a RAM or ROM device using standard bus cycles.
J
The microcontroller can execute a specific
instruction
that consists of several write
and read operations. This involves writing specific data patterns to special addresses
within the Flash or EEPROM to invoke an embedded algorithm. These instructions are
summarized in Table 9.
Typically, Flash memory can be read by the microcontroller using read operations, just as it
would read a ROM device. However, Flash memory can only be erased and programmed
with specific instructions. For example, the microcontroller cannot write a single byte directly
to Flash memory as one would write a byte to RAM. To program a byte into Flash memory,
the microcontroller must execute a program instruction sequence, then test the status
of the programming event. This status test is achieved by a read operation or polling the
Rdy/Busy pin (PC3).
The Flash memory can also be read by using special instructions to retrieve particular Flash
device information (sector protect status and ID).
The EEPROM is a bit different. Data can be written to EEPROM memory using write
operations, like writing to a RAM device, but the status of each write event must be checked
by the microcontroller. A write event can be one to 64 contiguous bytes. The status test is
very similar to that used for Flash memory (read operation or Rdy/Busy). Optionally, the
EEPROM memory may be put into a Software Data Protect (SDP) mode where it requires
instructions, rather than operations, to alter its contents. SDP mode makes writing to
EEPROM much like writing to Flash memory.
The
PSD913F1
Functional
Blocks
(cont.)
相關(guān)PDF資料
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參數(shù)描述
PSD913F1V-12B81 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD913F1V-12B81I 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
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PSD913F1V-12M 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
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