參數(shù)資料
型號： NAND01GR4B2CZA1E
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁數(shù)： 64/64頁
文件大?。?/td> 632K
代理商： NAND01GR4B2CZA1E
NAND01G-B, NAND02G-B
Summary description
9/64
JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark.
For information on how to order these options refer to Table 29: Ordering Information
Scheme. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See Table 2: Product Description, for all the devices available in the family.
Table 2.
Product Description(1)
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operating
Voltage
Timings
Packages
Random
access
time
(max)
Sequential
access
time
(min)
Page
Program
time
(typ)
Block
Erase
(typ)
NAND01G
-B
NAND01GR3B
1Gbit
x8
2048+
64
Bytes
128K+
4K
Bytes
64
Pages x
1024
Blocks
1.7 to
1.95V
25s
60ns
300s
2ms
TSOP48
VFBGA63
NAND01GW3B
2.7 to
3.6V
25s
50ns
300s
NAND01GR4B
x16(2)
1024+
32
Words
64K+
2K
Words
1.7 to
1.95V
25s
60ns
300s
NAND01GW4B
2.7 to
3.6V
25s
50ns
300s
NAND02G
-B
NAND02GR3B
2Gbit
x8
2048+
64
Bytes
128K+
4K
Bytes
64
Pages x
2048
Blocks
1.7 to
1.95V
25s
60ns
300s
2ms
TSOP48
TFBGA63
(2)
NAND02GW3B
2.7 to
3.6V
25s
50ns
300s
NAND02GR4B
x16(2)
1024+
32
Words
64K+
2K
Words
1.7 to
1.95V
25s
60ns
300s
NAND02GW4B
2.7 to
3.6V
25s
50ns
300s
1.
x16 organization only available for MCP
2.
Dual Die devices only
相關(guān)PDF資料
PDF描述
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512R4A2CZB6E 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0BZA6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R4A0BZB6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0CZA6T 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZB1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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