參數(shù)資料
型號： NAND01GR4B2CZA1E
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁數(shù)： 40/64頁
文件大?。?/td> 632K
代理商： NAND01GR4B2CZA1E
NAND01G-B, NAND02G-B
Maximum rating
45/64
10
Maximum rating
Stressing the device above the ratings listed in Table 19: Absolute Maximum Ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 19.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
– 50
125
°C
TSTG
Storage Temperature
– 65
150
°C
VIO
(1)
1.
Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.
Input or Output Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZB1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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