參數(shù)資料
型號(hào): NAND01GR4B2CZA1E
廠商: STMICROELECTRONICS
元件分類(lèi): PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝: 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁(yè)數(shù): 33/64頁(yè)
文件大?。?/td> 632K
代理商: NAND01GR4B2CZA1E
NAND01G-B, NAND02G-B
Data protection
39/64
Figure 18.
Block Protection State Diagram
1.
PRL must be High for the software commands to be accepted.
AI08663c
Locked
Locked-Down
Unlocked in
Locked Area
Power-Up
Block Unlock
Command
Blocks Lock-Down
Command
WP VIL >100ns
Blocks Lock
Command
WP VIL >100ns
(start + end block address)
Unlocked in
Locked-Down
Area
Blocks Lock-Down
Command
WP VIL >100ns
相關(guān)PDF資料
PDF描述
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512R4A2CZB6E 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0BZA6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R4A0BZB6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0CZA6T 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZB1 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory